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IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (4)
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
WRITE CYCLE
t WC
t EW
t AW
Write Cycle Time
Chip Enable to End-of-Write (3)
Address Valid to End-of-Write
55
45
45
____
____
____
ns
ns
ns
t AS
Address Set-up Time
(3)
0
____
ns
t WP
t WR
t DW
t HZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
40
0
30
____
____
____
____
25
ns
ns
ns
ns
t DH
Data Hold Time
(4)
0
____
ns
Write Enable to Output in High-Z
t WZ
(1,2)
____
25
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
0
10
10
____
____
____
ns
ns
ns
NOTES:
5675 tbl 12
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load.
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = V IL , UB or LB = V IL , SEM = V IH . To access semaphore, CE = V IH or UB and LB = V IH and SEM = V IL . Either condition must be valid for
the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the SRAM under all operating conditions. Although t DH and t OW values will vary over
voltage and temperature, the actual t DH will always be smaller than the actual t OW .
10
6.42
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